Exposure to 50 Hz Extremely-Low-Frequency Magnetic Fields Induces No DNA Damage in Cells by Gamma H2AX Technology
Abstract
Abstract Summary
Overview
The examination of DNA damage under exposure to extremely-low-frequency magnetic fields (ELF-MF) remains a controversial subject. This study employs the sensitive γH2AX marker to evaluate potential DNA damage from ELF-MF exposure comprehensively.
Methodology
The study utilized three different cell types: Human amnion epithelial cells (FLs), human skin fibroblast cells (HSFs), and human umbilical vein endothelial cells (HUVECs). These cells were exposed to 50 Hz ELF-MF at intensities of 0.4, 1, and 2 mT, over periods of 15 minutes, 1 hour, and 24 hours.
Findings
- No significant changes were observed in the number of γH2AX foci per cell.
- The percentage of γH2AX foci-positive cells remained similar across both exposed and control groups.
- Expression levels of γH2AX were consistent irrespective of the duration or intensity of exposure.
Conclusion
The study concludes that 50 Hz ELF-MF exposure, regardless of its intensity or duration, did not induce DNA damage in the tested cell types. This suggests a lack of correlation between 50 Hz ELF-MF exposure and immediate DNA damage via the γH2AX pathway.